High-power 1.3-mu m InGaAsP-InP amplifiers with tapered gain regions

被引：14

作者：

Donnelly, JP

Walpole, JN

Betts, GE

Groves, SH

Woodhouse, JD

ODonell, FJ

Missaggia, LJ

Bailey, RJ

Napoleone, A

机构：

[1] Lincoln Laboratory, Massachusetts Inst. of Technology, Lexington

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 11期

关键词：

D O I：

10.1109/68.541546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tapered structures fabricated in InGaAsP-InP 1.3-mu m quantum-well material have been evaluated as high-gain high-saturation-power amplifiers. The devices, which had a 1-mm-long ridge-waveguide input gain section followed bg a 2-mm-long tapered section, demonstrated an unsaturated gain of 26 dB at 2.0 A and about 30 dB at 2.8 A. Saturated output power at 2.8 A was >750 mW. At 2.0-A drive current and approximate to 10-mW input power, the relative intensity noise of the amplified signal was less than or equal to -160 dB/Hz at frequencies greater than or equal to 2 GHz.

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收藏

页码：1450 / 1452

页数：3

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