A Schottky barrier junction based on nanometer-scale interpenetrating GaP/gold networks

被引：14

作者：

Vanmaekelbergh, D

Koster, A

Marin, FI

机构：

[1] Debye Institute, University of Utrecht

来源：

ADVANCED MATERIALS | 1997年 / 9卷 / 07期

关键词：

D O I：

10.1002/adma.19970090713

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Communication: An interpenetrating GaP and gold nanometer-scale network system has been formed by electrochemical deposition of the metal on a nanoporous n-type semiconductor GaP network. The electrical characteristics of the system-in particular capacitance and current-voltage measurements-indicate that a semiconductor/metal Schottky barrier junction with a huge internal contact area is produced, which could find applications in solid-state electronic devices.

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页码：575 / &

页数：5

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