Fabrication and characterization of metal-ferroelectrics-semiconductor field effect transistor using epitaxial BaMgF4 films grown on Si(111) substrates

Metal-ferroelectrics-semiconductor field effect transistors (MFS FETs) were fabricated using ferroelectric BaMgF4 (BMF) films epitaxially grown on Si(111) substrates and their electrical characteristics were investigated. BMF films were grown on Si(111) substrates by using MBE method, and n-channel MFS FETs were fabricated on p-type Si(111) substrates by the conventional photolithographic technique. I-d-V-d and I-d-V-g characteristics of an fabricated MFS FET were measured, and the threshold voltage shift was observed by applying a gate voltage. It was also demonstrated that the drain current could be gradually changed by applying positive short pulses to the gate of an MFS FET.