Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC

被引：68

作者：

Son, NT ^{[1
]}

Magnusson, B

Janzén, E

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

[2] Okmet AB, SE-58330 Linkoping, Sweden

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 21期

关键词：

D O I：

10.1063/1.1522822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoexcitation-electron-paramagnetic-resonance (photo-EPR) studies were performed on p-type 4H-SiC irradiated with 2.5 MeV electrons. At W-band frequencies (similar to95 GHz) different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the associated defects. The photo-EPR results obtained for the positively charged carbon vacancy (V-C(+)) can be explained by a deep donor model with the (+/0) level located at (1.47+/-0.06) eV above the valence band. (C) 2002 American Institute of Physics.

引用

页码：3945 / 3947

页数：3

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