Carbon vacancy-related defect in 4H and 6H SiC -: art. no. 201201

被引：100

作者：

Son, NT ^{[1
]}

Hai, PN ^{[1
]}

Janzén, E ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.63.201201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An electron paramagnetic resonance (EPR) spectrum was observed at temperatures above 25 K in p-type 4H and 6H SiC irradiated with electrons. The center has C-3V symmetry with an electron spin S= 1/2. Using high frequency (similar to 95 GHz) EPR it was possible to obtain the derailed hyperfine structure due to the interaction with the four nearest silicon neighbors, and to identify the defect as the carbon vacancy in the positive-charge state (VC+). The g values and hyper fine tensor of the center in both polytypes are almost the same and no dependence on the inequivalent lattice sites has been detected.

引用

页数：4

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