ESR studies of defects in p-type 6H-SiC irradiated with 3MeV-electrons

被引：31

作者：

Cha, D

Itoh, H

Morishita, N

Kawasuso, A

Ohshima, T

Watanabe, Y

Ko, J

Lee, K

Nashiyama, I

机构：

[1] Japan Atom Energy Res Inst, Takasaki, Gumma 37012, Japan

[2] Kunsan Natl Univ, Dept Phys, Kunsan 573701, South Korea

[3] Tokyo Inst Technol, Dept Phys, Tokyo 152, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

electron spin resonance; electron irradiation; defects; annealing;

D O I：

10.4028/www.scientific.net/MSF.264-268.615

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron spin resonance (ESR) was used to study defects introduced in p-type 6H-SiC by irradiation of 3MeV-electrons. Five ESR signals labeled PA, PB, PC1, PC2, and PD related to radiation induced defects are found. The PA signal exhibits a nearly isotropic g-value of 2.003. As for the other PB, PC1, PC2, and PD, the angular dependence of each signal can be represented by a g-tensor of which the principal axes of g(1) and g(2) are in the {<11(2)over bar 0>} plane and that of g(3) is along the <<11(2)over bar 0>>, with an effective spm S=1/2. Partial annealing of the PA, PC1, PC2, and PD centers is observed around 200 degrees C and finally they disappear at 700 degrees C. A significant reduction of the PB center takes place by 200 degrees C annealing.

引用

页码：615 / 618

页数：4