POINT-DEFECTS IN SILICON-CARBIDE

被引：145

作者：

SCHNEIDER, J

MAIER, K

机构：

[1] Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90237-Z

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A review is given on recent progress made in a microscopic understanding of point defects in silicon carbide (SiC). Defect structures to be discussed include shallow nitrogen donors, group-III acceptors, the transition metal impurities vanadium and titanium and radiation induced defects, like the silicon vacancy in SiC.

引用

收藏

页码：199 / 206

页数：8

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