POINT-DEFECTS IN SILICON-CARBIDE

被引:145
作者
SCHNEIDER, J
MAIER, K
机构
[1] Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg
来源
PHYSICA B | 1993年 / 185卷 / 1-4期
关键词
D O I
10.1016/0921-4526(93)90237-Z
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A review is given on recent progress made in a microscopic understanding of point defects in silicon carbide (SiC). Defect structures to be discussed include shallow nitrogen donors, group-III acceptors, the transition metal impurities vanadium and titanium and radiation induced defects, like the silicon vacancy in SiC.
引用
收藏
页码:199 / 206
页数:8
相关论文
共 35 条
[31]  
VAINER VS, 1981, FIZ TVERD TELA, V23, P1432
[32]  
VANIER VS, 1986, SOV PHYS-SOLID STATE, V28, P201
[33]  
Watkins G.D., 1986, DEEP CTR SEMICONDUCT, P147
[34]   ELECTRON SPIN RESONANCE STUDIES IN SIC [J].
WOODBURY, HH ;
LUDWIG, GW .
PHYSICAL REVIEW, 1961, 124 (04) :1083-&
[35]  
Zubatov A. G., 1985, Soviet Physics - Solid State, V27, P197