POINT-DEFECTS IN SILICON-CARBIDE

被引:145
作者
SCHNEIDER, J
MAIER, K
机构
[1] Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg
来源
PHYSICA B | 1993年 / 185卷 / 1-4期
关键词
D O I
10.1016/0921-4526(93)90237-Z
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A review is given on recent progress made in a microscopic understanding of point defects in silicon carbide (SiC). Defect structures to be discussed include shallow nitrogen donors, group-III acceptors, the transition metal impurities vanadium and titanium and radiation induced defects, like the silicon vacancy in SiC.
引用
收藏
页码:199 / 206
页数:8
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