Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy

被引：42

作者：

Ling, CC ^{[1
]}

Beling, CD ^{[1
]}

Fung, S ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.62.8016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

n-type 6H silicon carbide has been studied using positron lifetime spectroscopy with isochronal annealing temperatures of 400, 650, 900, 1200, and 1400 degrees C. in the as-grown sample, we have identified the Vsi vacancy, the VCVSi divacancy, and probably the V-C vacancy. The silicon vacancy and the carbon vacancy were found to anneal out in the temperature range 400-650 degrees C. The VCVSi divacancy was found to persist at an annealing temperature of 1400 degrees C.

引用

页码：8016 / 8022

页数：7

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