A Two-Stage Model for Negative Bias Temperature Instability

被引：142

作者：

Grasser, T. ^{[1
]}

Kaczer, B. ^{[3
]}

Goes, W. ^{[1
]}

Aichinger, Th. ^{[2
]}

Hehenberger, Ph.

Nelhiebel, M.

机构：

[1] TU Wien, Christian Doppler Lab TCAD, Vienna, Austria

[2] Inst Microelect, Vienna, Austria

[3] IMEC, Leuven, Belgium

来源：

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年

基金：

芬兰科学院;

关键词：

TIME-DEPENDENCE; DEEP LEVELS; 1/F NOISE; DEFECTS; TRAP; KINETICS; RECOMBINATION; DEGRADATION; IONIZATION; GAAS;

D O I：

10.1109/IRPS.2009.5173221

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Based on the established properties of the most commonly observed defect in amorphous oxides, the E' center, we suggest a coupled two-stage model to explain the negative bias temperature instability. We show that a full model that includes the creation of E' centers from their neutral oxygen vacancy precursors and their ability to be repeatedly charged and discharged prior to total annealing is required to describe the first stage of degradation. In the second stage a positively charged E' center can trigger the depassivation of P-b centers at the Si/SiO2 interface or K-N centers in oxynitrides to create an unpassivated silicon dangling bond. We evaluate the new model to experimental data obtained from three vastly different technologies (thick SiO2, SiON, and HK) and obtain very promising results.

引用

页码：33 / +

页数：4

共 52 条

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AICHINGER T, 2009, P IRPS IN PRESS

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