ELECTRON-SPIN-RESONANCE EVIDENCE FOR THE STRUCTURE OF A SWITCHING OXIDE TRAP - LONG-TERM STRUCTURAL-CHANGE AT SILICON DANGLING BOND SITES IN SIO2

被引：43

作者：

CONLEY, JF ^{[1
]}

LENAHAN, PM ^{[1
]}

LELIS, AJ ^{[1
]}

OLDHAM, TR ^{[1
]}

机构：

[1] USA,RES LAB,ADELPHI,MD 20783

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 15期

关键词：

D O I：

10.1063/1.115095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can ''switch'' charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some E'(gamma) centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps. (C) 1995 American Institute of Physics.

引用

收藏

页码：2179 / 2181

页数：3

相关论文

共 20 条

[1]

DRUIJF KG, UNPUB

[2] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J].

FEIGL, FJ ;

FOWLER, WB ;

YIP, KL .

SOLID STATE COMMUNICATIONS, 1974, 14 (03) :225-229

[3] THE ROLE OF BORDER TRAPS IN MOS HIGH-TEMPERATURE POSTIRRADIATION ANNEALING RESPONSE [J].

FLEETWOOD, DM ;

SHANEYFELT, MR ;

RIEWE, LC ;

WINOKUR, PS ;

REBER, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) :1323-1334

[4] EXPERIMENTAL-EVIDENCE OF 2 SPECIES OF RADIATION-INDUCED TRAPPED POSITIVE CHARGE [J].

FREITAG, RK ;

BROWN, DB ;

DOZIER, CM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) :1316-1322

[5] EVIDENCE FOR 2 TYPES OF RADIATION-INDUCED TRAPPED POSITIVE CHARGE [J].

FREITAG, RK ;

BROWN, DB ;

DOZIER, CM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :1828-1834

[6] A SPIN DEPENDENT RECOMBINATION STUDY OF RADIATION-INDUCED DEFECTS AT AND NEAR THE SI/SIO2 INTERFACE [J].

JUPINA, MA ;

LENAHAN, PM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) :1800-1807

[7] TIME-DEPENDENCE OF SWITCHING OXIDE TRAPS [J].

LELIS, AJ ;

OLDHAM, TR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :1835-1843

[8] REVERSIBILITY OF TRAPPED HOLE ANNEALING [J].

LELIS, AJ ;

BOESCH, HE ;

OLDHAM, TR ;

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1186-1191

[9]

LELIS AJ, 1989, IEEE T NUCL SCI, V36, P1186

[10] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J].

LENAHAN, PM ;

DRESSENDORFER, PV .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3495-3499