REVERSIBILITY OF TRAPPED HOLE ANNEALING

被引：160

作者：

LELIS, AJ

BOESCH, HE

OLDHAM, TR

MCLEAN, FB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

D O I：

10.1109/23.25437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1186 / 1191

页数：6

共 24 条

[1] COMMON ORIGIN FOR ELECTRON AND HOLE TRAPS IN MOS DEVICES [J].

ASLAM, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2535-2539

[2] HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING [J].

BENEDETTO, JM ;

BOESCH, HE ;

MCLEAN, FB ;

MIZE, JP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3916-3920

[3]

BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446

[4] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].

CAPLAN, PJ ;

POINDEXTER, EH ;

DEAL, BE ;

RAZOUK, RR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5847-5854

[5] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS [J].

DERBENWICK, GF ;

SANDER, HH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2244-2247

[6] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J].

DOZIER, CM ;

BROWN, DB ;

THROCKMORTON, JL ;

MA, DI .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4363-4368

[7] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J].

FEIGL, FJ ;

FOWLER, WB ;

YIP, KL .

SOLID STATE COMMUNICATIONS, 1974, 14 (03) :225-229

[8] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

MASERJIAN, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1462-1466

[9] LOGARITHMIC DETRAPPING RESPONSE FOR HOLES INJECTED INTO SIO2 AND THE INFLUENCE OF THERMAL-ACTIVATION AND ELECTRIC-FIELDS [J].

LAKSHMANNA, V ;

VENGURLEKAR, AS .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4548-4554

[10] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J].

LENAHAN, PM ;

DRESSENDORFER, PV .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3495-3499

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