LOGARITHMIC DETRAPPING RESPONSE FOR HOLES INJECTED INTO SIO2 AND THE INFLUENCE OF THERMAL-ACTIVATION AND ELECTRIC-FIELDS

被引：61

作者：

LAKSHMANNA, V

VENGURLEKAR, AS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.340153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4548 / 4554

页数：7

共 22 条

[1]

BALLAND B, 1986, INSTABILITIES SILICO, V2, pCH10

[2] SATURATION OF THRESHOLD VOLTAGE SHIFT IN MOSFETS AT HIGH TOTAL DOSE [J].

BOESCH, HE ;

MCLEAN, FB ;

BENEDETTO, JM ;

MCGARRITY, JM ;

BAILEY, WE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1191-1197

[3] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J].

FAIR, RB ;

SUN, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) :83-94

[4] XPS STUDIES OF STRUCTURE-INDUCED RADIATION EFFECTS AT THE SI-SIO2 INTERFACE [J].

GRUNTHANER, FJ ;

LEWIS, BF ;

ZAMINI, N ;

MASERJIAN, J ;

MADHUKAR, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1640-1646

[5] LOW-TEMPERATURE IRRADIATION EFFECTS IN SIO2-INSULATED MIS DEVICES [J].

HARARI, E ;

WANG, S ;

ROYCE, BSH .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1310-1317

[6] HOLE MOBILITY AND TRANSPORT IN THIN SIO2-FILMS [J].

HUGHES, RC .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :436-438

[7] TIME-RESOLVED HOLE TRANSPORT IN ALPHA-SIO2 [J].

HUGHES, RC .

PHYSICAL REVIEW B, 1977, 15 (04) :2012-2020

[8] INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES [J].

LAI, SK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2540-2546

[9] CONTRASTS IN ELECTRON AND HOLE TRAPPING PHENOMENA IN PYROGENIC OXIDES GROWN WITH DIFFERENT H2O PARTIAL PRESSURES ON SILICON [J].

LAKSHMANNA, V ;

VENGURLEKAR, AS ;

RAMANATHAN, KV .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2337-2341

[10] DISCHARGE OF MNOS STRUCTURES [J].

LUNDKVIST, L ;

LUNDSTROM, I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1973, 16 (07) :811-+

← 1 2 3 →