TIME-DEPENDENCE OF SWITCHING OXIDE TRAPS

被引：135

作者：

LELIS, AJ

OLDHAM, TR

机构：

[1] U.S. Army Research Laboratory, Adelphi

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

D O I：

10.1109/23.340515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-oxide semiconductor field-effect transistors (MOSFETs) were irradiated and then annealed under alternating positive and negative bias. The magnitude of the reversible trapped-oxide charge component decayed over the course of several cycles (of 3 x 10(3) s each) in one of two processes studied. The HDL hole trap model-is shown to explain these and other recent results.

引用

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页码：1835 / 1843

页数：9

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