EVIDENCE FOR A NEGATIVE ELECTRON-ELECTRON CORRELATION-ENERGY IN THE DOMINANT DEEP TRAPPING CENTER IN SILICON-NITRIDE FILMS

被引：48

作者：

CURRY, SE

LENAHAN, PM

KRICK, DT

KANICKI, J

KIRK, CT

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] MIT,LINCOLN LABS,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 14期

关键词：

D O I：

10.1063/1.102514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report results of electron spin resonance and capacitance versus voltage measurements of silicon nitride/silicon dioxide/silicon devices subjected to high electric field carrier injection into the nitride and (in some samples) ultraviolet illumination. Our results strongly indicate that the dominant trapping center in these silicon nitride films has a negative electron-electron correlation energy.

引用

页码：1359 / 1361

页数：3

共 16 条

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS
ANDERSON, PW
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955
[2] ARNETT PC, 1975, APPL PHYS LETT, V26, P941
[3] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES
CHU, TL
SZEDON, JR
LEE, CH
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &
[4] METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS
HEPBURN, AR
MARSHALL, JM
MAIN, C
POWELL, MJ
VANBERKEL, C
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2215 - 2218
[5] ISHI IV, 1982, PHYS STATUS SOLIDI B, V114, pK111
[6] KANICKI J, 1989, APPL PHYS LETT, V55, P1112
[7] ELECTRICALLY ACTIVE POINT-DEFECTS IN AMORPHOUS-SILICON NITRIDE - AN ILLUMINATION AND CHARGE INJECTION STUDY
KRICK, DT
LENAHAN, PM
KANICKI, J
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3558 - 3563
[8] STABLE PHOTOINDUCED PARAMAGNETIC DEFECTS IN HYDROGENATED AMORPHOUS-SILICON NITRIDE
KRICK, DT
LENAHAN, PM
KANICKI, J
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 608 - 610
[9] THE NATURE OF THE DOMINANT DEEP TRAP IN AMORPHOUS-SILICON NITRIDE FILMS - EVIDENCE FOR A NEGATIVE CORRELATION-ENERGY
LENAHAN, PM
KRICK, DT
KANICKI, J
[J]. APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 392 - 405
[10] 1ST OBSERVATION OF THE SI-29 HYPERFINE SPECTRA OF SILICON DANGLING BOND CENTERS IN SILICON-NITRIDE
LENAHAN, PM
CURRY, SE
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (02) : 157 - 159

← 1 2 →