STABLE PHOTOINDUCED PARAMAGNETIC DEFECTS IN HYDROGENATED AMORPHOUS-SILICON NITRIDE

被引：53

作者：

KRICK, DT ^{[1
]}

LENAHAN, PM ^{[1
]}

KANICKI, J ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.98362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：608 / 610

页数：3

共 9 条

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[2] KANICKI J, 1986, P S SILICON NITRIDE
[3] PHOTOINDUCED ELECTRON-SPIN-RESONANCE IN AMORPHOUS SI1-XNX-H FILMS
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[4] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499
[5] MAKINO T, 1983, J ELECTROCHEM SOC, V30, P451
[6] DEFECTS IN AMORPHOUS SI-N FILMS PREPARED BY RF SPUTTERING
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[J]. SOLAR ENERGY MATERIALS, 1982, 8 (1-3): : 311 - 317
[7] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
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[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294
[8] ULTEE CL, 1960, PHYS CHEM, V64, P1873
[9] ELECTRON-SPIN RESONANCE IN DISCHARGE-PRODUCED SILICON-NITRIDE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : L35 - L37