THE NATURE OF THE DOMINANT DEEP TRAP IN AMORPHOUS-SILICON NITRIDE FILMS - EVIDENCE FOR A NEGATIVE CORRELATION-ENERGY

被引：57

作者：

LENAHAN, PM ^{[1
]}

KRICK, DT ^{[1
]}

KANICKI, J ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90456-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：392 / 405

页数：14

共 33 条

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[7] CALCULATIONS OF THE G-VALUE AND LINEWIDTH OF THE ELECTRON-SPIN-RESONANCE SIGNAL IN AMORPHOUS-SILICON NITRIDE
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[8] ELECTRON-SPIN-RESONANCE STUDY OF DEFECTS IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 445 - 447
[9] HYDROGEN-RELATED MEMORY TRAPS IN THIN SILICON-NITRIDE FILMS
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STEIN, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 600 - 607
[10] CHARGE STORAGE AND DISTRIBUTION IN THE NITRIDE LAYER OF THE METAL-NITRIDE-OXIDE SEMICONDUCTOR STRUCTURES
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 311 - 319

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