HYDROGEN-RELATED MEMORY TRAPS IN THIN SILICON-NITRIDE FILMS

[1] VARIATION IN THE STOICHIOMETRY OF THIN SILICON-NITRIDE INSULATING FILMS ON SILICON AND ITS CORRELATION WITH MEMORY TRAPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 484 - 487

[2] BROWN WD, 1979, SOLID STATE TECHNOL, V22, P77

[3] THRESHOLD-ALTERABLE SI-GATE MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 584 - 586

[4] DUNN H, 1981, J ELECTROCHEM SOC, V128, P1555

[5] FUJITA S, 1980, IOP C SERIES, V59, P551

[6] Harrick N.J., 1967, INTERNAL REFLECTION

[7] MNOS TRAPS AND TAILORED TRAP DISTRIBUTION GATE DIELECTRIC MNOS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 245 - 248

[8] KAPOOR VJ, 1982, J APPL PHYS, V53, P5079, DOI 10.1063/1.331340

[9] KAPOOR VJ, 1981, J VAC SCI TECHNOL, V18, P305, DOI 10.1116/1.570747

[10] CHARGE STORAGE AND DISTRIBUTION IN THE NITRIDE LAYER OF THE METAL-NITRIDE-OXIDE SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 311 - 319

[1] VARIATION IN THE STOICHIOMETRY OF THIN SILICON-NITRIDE INSULATING FILMS ON SILICON AND ITS CORRELATION WITH MEMORY TRAPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 484 - 487

[2] BROWN WD, 1979, SOLID STATE TECHNOL, V22, P77

[3] THRESHOLD-ALTERABLE SI-GATE MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 584 - 586

[4] DUNN H, 1981, J ELECTROCHEM SOC, V128, P1555

[5] FUJITA S, 1980, IOP C SERIES, V59, P551

[6] Harrick N.J., 1967, INTERNAL REFLECTION

[7] MNOS TRAPS AND TAILORED TRAP DISTRIBUTION GATE DIELECTRIC MNOS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 245 - 248

[8] KAPOOR VJ, 1982, J APPL PHYS, V53, P5079, DOI 10.1063/1.331340

[9] KAPOOR VJ, 1981, J VAC SCI TECHNOL, V18, P305, DOI 10.1116/1.570747

[10] CHARGE STORAGE AND DISTRIBUTION IN THE NITRIDE LAYER OF THE METAL-NITRIDE-OXIDE SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 311 - 319