CHARGE STORAGE AND DISTRIBUTION IN THE NITRIDE LAYER OF THE METAL-NITRIDE-OXIDE SEMICONDUCTOR STRUCTURES

被引：39

作者：

KAPOOR, VJ

TURI, RA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 01期

关键词：

D O I：

10.1063/1.328495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：311 / 319

页数：9

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共 39 条

[1] SODIUM MIGRATION THROUGH ELECTRON-GUN EVAPORATED AL203 AND DOUBLE LAYER AL203-S102 STRUCTURES
ABBOTT, RA
KAMINS, TI
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (05) : 565 - +
[2] CONTACT CURRENTS IN SILICON-NITRIDE
ARNETT, PC
DIMARIA, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2092 - 2097
[3] THEORY OF MNOS MEMORY TRANSISTOR
CHANG, JJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 511 - 518
[4] NONVOLATILE SEMICONDUCTOR MEMORY DEVICES
CHANG, JJ
[J]. PROCEEDINGS OF THE IEEE, 1976, 64 (07) : 1039 - 1059
[5] THRESHOLD-ALTERABLE SI-GATE MOS DEVICES
CHEN, PCY
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 584 - 586
[6] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) : C198 - C205
[7] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING
DIMARIA, DJ
WEINBERG, ZA
AITKEN, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906
[8] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES
DIMARIA, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4073 - 4077
[9] HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION
DIMARIA, DJ
ARNETT, PC
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 711 - 713
[10] DIMARIA DJ, 1977, IBM J RES DEV, V227

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