HYDROGEN-RELATED MEMORY TRAPS IN THIN SILICON-NITRIDE FILMS

被引：68

作者：

KAPOOR, VJ ^{[1
]}

BAILEY, RS ^{[1
]}

STEIN, HJ ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.571966

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：600 / 607

页数：8

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