ION-BOMBARDMENT-INDUCED TRANSFER OF H FROM N TO SI IN AMORPHOUS SI3N4

[1] RECOIL CONTRIBUTION TO ION-IMPLANTATION ENERGY-DEPOSITION DISTRIBUTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3385 - 3394

[2] BRICE DK, 1971, RADIAT EFF, V11, P227

[3] BRODSKY MH, 1977, ELECTROCHEM SOC, P793

[4] CARLSON DE, 1977, EL SOC EXT ABSTR, P791

[5] Duffy M. T., 1970, RCA Review, V31, P742

[6] Harrick N.J., 1967, INTERNAL REFLECTION

[7] PAUL W, 1977, ELECTROCHEM SOC, P794

[8] Stein H. J., 1977, Electrochemical Society Spring Meeting (papers in extended summary form only received), P303

[9] CHEMICALLY BOUND HYDROGEN IN CVD SI3N4 - DEPENDENCE ON NH3/SIH4 RATIO AND ON ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 908 - 912

[10] HYDROGEN CONTENT AND ANNEALING OF MEMORY QUALITY SILICON-OXYNITRIDE FILMS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) : 161 - 177

[1] RECOIL CONTRIBUTION TO ION-IMPLANTATION ENERGY-DEPOSITION DISTRIBUTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3385 - 3394

[2] BRICE DK, 1971, RADIAT EFF, V11, P227

[3] BRODSKY MH, 1977, ELECTROCHEM SOC, P793

[4] CARLSON DE, 1977, EL SOC EXT ABSTR, P791

[5] Duffy M. T., 1970, RCA Review, V31, P742

[6] Harrick N.J., 1967, INTERNAL REFLECTION

[7] PAUL W, 1977, ELECTROCHEM SOC, P794

[8] Stein H. J., 1977, Electrochemical Society Spring Meeting (papers in extended summary form only received), P303

[9] CHEMICALLY BOUND HYDROGEN IN CVD SI3N4 - DEPENDENCE ON NH3/SIH4 RATIO AND ON ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 908 - 912

[10] HYDROGEN CONTENT AND ANNEALING OF MEMORY QUALITY SILICON-OXYNITRIDE FILMS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) : 161 - 177