HYDROGEN CONTENT AND ANNEALING OF MEMORY QUALITY SILICON-OXYNITRIDE FILMS

[1] BALK P, 1973, SOLID STATE DEVICES, P51

[2] PROPERTIES OF SIXOYNZ FILMS ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 311 - &

[3] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 997 - &

[4] A LOW-STRESS INSULATING FILM ON SILICON BY CHEMICAL VAPOR DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4458 - &

[5] GOODMAN AM, 1970, RCA REV, V31, P342

[6] Harrick N.J., 1967, INTERNAL REFLECTION

[7] HOLLOWAY PH, TO BE PUBLISHED

[8] STRUCTURAL PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE [J]. METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 735 - &

[9] MAGUIRE HG, 1972, J ELECTROCHEM SOC, V19, P791

[10] MILEK JT, 1971, HDB ELECTRONIC MATER, V3

[1] BALK P, 1973, SOLID STATE DEVICES, P51

[2] PROPERTIES OF SIXOYNZ FILMS ON SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 311 - &

[3] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 997 - &

[4] A LOW-STRESS INSULATING FILM ON SILICON BY CHEMICAL VAPOR DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4458 - &

[5] GOODMAN AM, 1970, RCA REV, V31, P342

[6] Harrick N.J., 1967, INTERNAL REFLECTION

[7] HOLLOWAY PH, TO BE PUBLISHED

[8] STRUCTURAL PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE [J]. METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 735 - &

[9] MAGUIRE HG, 1972, J ELECTROCHEM SOC, V19, P791

[10] MILEK JT, 1971, HDB ELECTRONIC MATER, V3