STRUCTURAL PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE

被引：19

作者：

KOHLER, WA

机构：

来源：

METALLURGICAL TRANSACTIONS | 1970年 / 1卷 / 03期

关键词：

D O I：

10.1007/BF02811602

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

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页码：735 / &

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[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
GLEIM, PS
YEAKLEY, RL
RUNYAN, WR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &
[2] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
CHU, TL
LEE, CH
GRUBER, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 717 - &
[3] EVIDENCE OF EXCESS SILICON IN REACTIVELY SPUTTERED SILICON NITRIDE FILMS
CORDES, LF
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (12) : 383 - &
[4] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
DEAL, BE
FLEMING, PJ
CASTRO, PL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 300 - &
[5] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
MACKENNA, EL
CASTRO, PL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 997 - &
[6] PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES
DOO, VY
KERR, DR
NICHOLS, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) : 61 - &
[7] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE
DOO, VY
NICHOLS, DR
SILVEY, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1279 - &
[8] SILICON NITRIDE THIN FILMS FROM SICL4 PLUS NH3 - PREPARATION AND PROPERTIES
GRIECO, MJ
WORTHING, FL
SCHWARTZ, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) : 525 - +
[9] SILICON NITRIDE FILMS BY REACTIVE SPUTTERING
HU, SM
GREGOR, LV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 826 - +
[10] PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION
SWANN, RCG
MEHTA, RR
CAUGE, TP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 713 - &