SILICON NITRIDE THIN FILMS FROM SICL4 PLUS NH3 - PREPARATION AND PROPERTIES

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] BILLY M, 1959, ANN CHIM PARIS, V4, P795

[3] BUCK TM, 1965, NOV IEEE SIL INT SPE

[4] THICKNESS MEASUREMENT OF SILICON DIOXIDE LAYERS BY ULTRAVIOLET-VISIBLE INTERFERENCE METHOD [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 755 - &

[5] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[6] DALTON JV, 1966, J ELECTROCHEM SOC, V113, pC165

[7] DOO UY, 1966, J ELECTROCHEM SOC, V113, pC212

[8] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1279 - &

[9] SILICON NITRIDE A NEW DIFFUSION MASK [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) : 561 - &

[10] FINNE FM, PRIVATE COMMUNICATIO

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] BILLY M, 1959, ANN CHIM PARIS, V4, P795

[3] BUCK TM, 1965, NOV IEEE SIL INT SPE

[4] THICKNESS MEASUREMENT OF SILICON DIOXIDE LAYERS BY ULTRAVIOLET-VISIBLE INTERFERENCE METHOD [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 755 - &

[5] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[6] DALTON JV, 1966, J ELECTROCHEM SOC, V113, pC165

[7] DOO UY, 1966, J ELECTROCHEM SOC, V113, pC212

[8] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1279 - &

[9] SILICON NITRIDE A NEW DIFFUSION MASK [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) : 561 - &

[10] FINNE FM, PRIVATE COMMUNICATIO