SILICON NITRIDE THIN FILMS FROM SICL4 PLUS NH3 - PREPARATION AND PROPERTIES

[21] FAST ETCHING IMPERFECTIONS IN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (01) : 89 - &

[22] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[23] ODWYER JJ, 1964, THEORY DIELECTRIC BR, P6

[24] THE ELECTRIC STRENGTH OF DIELECTRIC FILMS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1948, 60 (339): : 243 - +

[25] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) : 43 - &

[26] POWELL CF, 1966, VAPOR DEPOSITION ED, P612

[27] OPTICAL THICKNESS MEASUREMENT OF THIN TRANSPARENT FILMS ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3804 - &

[28] SNEED MC, 1959, COMPREHENSIVE INORGA, V5, P173

[29] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &

[30] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 653 - &

[21] FAST ETCHING IMPERFECTIONS IN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (01) : 89 - &

[22] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[23] ODWYER JJ, 1964, THEORY DIELECTRIC BR, P6

[24] THE ELECTRIC STRENGTH OF DIELECTRIC FILMS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1948, 60 (339): : 243 - +

[25] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) : 43 - &

[26] POWELL CF, 1966, VAPOR DEPOSITION ED, P612

[27] OPTICAL THICKNESS MEASUREMENT OF THIN TRANSPARENT FILMS ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3804 - &

[28] SNEED MC, 1959, COMPREHENSIVE INORGA, V5, P173

[29] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &

[30] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 653 - &