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CHEMICALLY BOUND HYDROGEN IN CVD SI3N4 - DEPENDENCE ON NH3/SIH4 RATIO AND ON ANNEALING
被引:99
作者
:
STEIN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
STEIN, HJ
WEGENER, HAR
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
WEGENER, HAR
机构
:
[1]
SANDIA LABS,ALBUQUERQUE,NM 87115
[2]
SPERRY RAND CORP,RES CTR,SUDBURY,MA 01776
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1977年
/ 124卷
/ 06期
关键词
:
D O I
:
10.1149/1.2133451
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:908 / 912
页数:5
相关论文
共 18 条
[1]
DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
ARCHER, RJ
[J].
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA,
1962,
52
(09)
: 970
-
&
[2]
BALK P, 1973, SOLID STATE DEVICES, P51
[3]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
BEAN, KE
GLEIM, PS
论文数:
0
引用数:
0
h-index:
0
GLEIM, PS
YEAKLEY, RL
论文数:
0
引用数:
0
h-index:
0
YEAKLEY, RL
RUNYAN, WR
论文数:
0
引用数:
0
h-index:
0
RUNYAN, WR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
: 733
-
&
[4]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 948
-
&
[5]
CHADWICK AV, 1975, POINT DEFECTS SOLIDS, V2, pCH6
[6]
Crank J., 1956, MATH DIFFUSION
[7]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 997
-
&
[8]
GAYDON AG, 1968, DISSOCIATION ENERGIE, P249
[9]
ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MEYER, O
论文数:
0
引用数:
0
h-index:
0
MEYER, O
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
RODRIGUE.V
论文数:
0
引用数:
0
h-index:
0
RODRIGUE.V
[J].
APPLIED PHYSICS LETTERS,
1970,
16
(06)
: 232
-
&
[10]
Harrick N.J., 1967, INTERNAL REFLECTION
←
1
2
→
共 18 条
[1]
DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
ARCHER, RJ
[J].
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA,
1962,
52
(09)
: 970
-
&
[2]
BALK P, 1973, SOLID STATE DEVICES, P51
[3]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
BEAN, KE
GLEIM, PS
论文数:
0
引用数:
0
h-index:
0
GLEIM, PS
YEAKLEY, RL
论文数:
0
引用数:
0
h-index:
0
YEAKLEY, RL
RUNYAN, WR
论文数:
0
引用数:
0
h-index:
0
RUNYAN, WR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
: 733
-
&
[4]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 948
-
&
[5]
CHADWICK AV, 1975, POINT DEFECTS SOLIDS, V2, pCH6
[6]
Crank J., 1956, MATH DIFFUSION
[7]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
: 997
-
&
[8]
GAYDON AG, 1968, DISSOCIATION ENERGIE, P249
[9]
ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MEYER, O
论文数:
0
引用数:
0
h-index:
0
MEYER, O
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
RODRIGUE.V
论文数:
0
引用数:
0
h-index:
0
RODRIGUE.V
[J].
APPLIED PHYSICS LETTERS,
1970,
16
(06)
: 232
-
&
[10]
Harrick N.J., 1967, INTERNAL REFLECTION
←
1
2
→