ANALYSES FOR STOICHIOMETRY AND FOR HYDROGEN AND OXYGEN IN SILICON-NITRIDE FILMS

被引：41

作者：

STEIN, HJ

PICRAUX, ST

HOLLOWAY, PH

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 08期

关键词：

D O I：

10.1109/T-ED.1978.19215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1008 / 1014

页数：7

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共 26 条

[1] CHEMICAL NONUNIFORMITY OF THIN DIELECTRIC FILMS PRODUCED BY AMMONOLYSIS OF MONOSILANE
BELYI, VI
KUZNETSOV, FA
SMIRNOVA, TP
CHRAMOVA, LV
KRAVCHENKO, LK
[J]. THIN SOLID FILMS, 1976, 37 (02) : L39 - L42
[2] PROPERTIES OF SIXOYNZ FILMS ON SI
BROWN, DM
GRAY, PV
HEUMANN, FK
PHILIPP, HR
TAFT, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 311 - &
[3] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
ROBINETT.WC
CARLSON, HG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &
[4] COLEMAN MV, 1968, PHYS STAT SOLIDI, V25
[5] FOTI G, 1977, ION BEAM HDB MATERIA
[6] EVALUATION OF SILICON NITRIDE LAYERS OF VARIOUS COMPOSITION BY BACKSCATTERING AND CHANNELING-EFFECT MEASUREMENTS
GYULAI, J
MEYER, O
MAYER, JW
RODRIGUEZ, V
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 451 - +
[7] Harrick N.J., 1967, INTERNAL REFLECTION
[8] QUANTITATIVE DETECTION OF OXYGEN IN SILICON-NITRIDE ON SILICON
HOLLOWAY, PH
STEIN, HJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 723 - 728
[9] AUGER DEPTH PROFILING OF MNOS STRUCTURES BY ION SPUTTERING
JOHANNESSEN, JS
HELMS, CR
SPICER, WE
STRAUSSER, YE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 547 - 551
[10] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS
KOOI, E
VANLIEROP, JG
APPELS, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1117 - 1120