ELECTRON-SPIN-RESONANCE STUDY OF DEFECTS IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE

被引：52

作者：

JOUSSE, D ^{[1
]}

KANICKI, J ^{[1
]}

KRICK, DT ^{[1
]}

LENAHAN, PM ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.99438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：445 / 447

页数：3

共 11 条

[1] DANGLING BONDS IN MEMORY-QUALITY SILICON-NITRIDE FILMS [J].

FUJITA, S ;

SASAKI, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) :398-402

[2] AMORPHOUS SIN-H DIELECTRICS WITH LOW-DENSITY OF DEFECTS [J].

HASEGAWA, S ;

MATUURA, M ;

KURATA, Y .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1272-1274

[3] CALCULATIONS OF THE G-VALUE AND LINEWIDTH OF THE ELECTRON-SPIN-RESONANCE SIGNAL IN AMORPHOUS-SILICON NITRIDE [J].

ISHII, N ;

OOZORA, S ;

KUMEDA, M ;

SHIMIZU, T .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 114 (02) :K111-K114

[4]

JOUSSE D, 1987, P S DIELECTRIC FILMS

[5]

KANICKI J, 1987, ELECTROCHEM SOC P, V8710, P261

[6] BONDS AND DEFECTS IN PLASMA-DEPOSITED SILICON-NITRIDE USING SIH4-NH3-AR MIXTURE [J].

MAKINO, T ;

MAEDA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (09) :1300-1306

[7] COMPOSITION AND STRUCTURE CONTROL BY SOURCE GAS RATIO IN LPCVD SINX [J].

MAKINO, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :450-455

[8] PROPERTIES OF HYDROGENATED AMORPHOUS SI-N PREPARED BY VARIOUS METHODS [J].

MORIMOTO, A ;

TSUJIMURA, Y ;

KUMEDA, M ;

SHIMIZU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11) :1394-1398

[9] GAP STATES IN SILICON-NITRIDE [J].

ROBERTSON, J ;

POWELL, MJ .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :415-417

[10] DEFECTS IN AMORPHOUS SI-N FILMS PREPARED BY RF SPUTTERING [J].

SHIMIZU, T ;

OOZORA, S ;

MORIMOTO, A ;

KUMEDA, M ;

ISHII, N .

SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :311-317

← 1 2 →