BONDS AND DEFECTS IN PLASMA-DEPOSITED SILICON-NITRIDE USING SIH4-NH3-AR MIXTURE

被引：41

作者：

MAKINO, T

MAEDA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1986年 / 25卷 / 09期

关键词：

D O I：

10.1143/JJAP.25.1300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1300 / 1306

页数：7

共 33 条

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[2]

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[4]

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[9] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

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[10] INFRARED SPECTROSCOPIC STUDY OF HYDROGENATED AND DEUTERATED SILICON-NITRIDE FILMS PREPARED FROM PLASMA-ENHANCED DEPOSITION [J].

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JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3068-3071

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