AMORPHOUS SIN-H DIELECTRICS WITH LOW-DENSITY OF DEFECTS

被引：59

作者：

HASEGAWA, S

MATUURA, M

KURATA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 19期

关键词：

D O I：

10.1063/1.97383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1272 / 1274

页数：3

相关论文

共 17 条

[1] DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW B, 1982, 26 (11): : 6040 - 6052
[2] JAHN-TELLER-DISTORTED NITROGEN DONOR IN LASER-ANNEALED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1627 - 1629
[3] DANGLING BONDS IN MEMORY-QUALITY SILICON-NITRIDE FILMS
FUJITA, S
SASAKI, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 398 - 402
[4] ELECTRON-SPIN-RESONANCE AND ELECTRICAL-PROPERTIES OF P-DOPED MICROCRYSTALLINE SI
HASEGAWA, S
NARIKAWA, S
KURATA, Y
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (05): : 431 - 447
[5] PROPERTIES OF AMORPHOUS SEMICONDUCTING A-SI-H/A-SINX-H MULTILAYER FILMS AND OF A-SINX-H ALLOYS
IBARAKI, N
FRITZSCHE, H
[J]. PHYSICAL REVIEW B, 1984, 30 (10): : 5791 - 5799
[6] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY
KARCHER, R
LEY, L
JOHNSON, RL
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1896 - 1910
[7] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H
KURATA, H
HIROSE, M
OSAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L811 - L813
[8] THE ELECTRONIC-PROPERTIES OF PLASMA-DEPOSITED FILMS OF HYDROGENATED AMORPHOUS SINX (O LESS-THAN X LESS-THAN 1.2)
LOWE, AJ
POWELL, MJ
ELLIOTT, SR
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1251 - 1258
[9] COMPOSITION AND STRUCTURE CONTROL BY SOURCE GAS RATIO IN LPCVD SINX
MAKINO, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 450 - 455
[10] PROPERTIES OF HYDROGENATED AMORPHOUS SI-N PREPARED BY VARIOUS METHODS
MORIMOTO, A
TSUJIMURA, Y
KUMEDA, M
SHIMIZU, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11): : 1394 - 1398