ELECTRICALLY ACTIVE POINT-DEFECTS IN AMORPHOUS-SILICON NITRIDE - AN ILLUMINATION AND CHARGE INJECTION STUDY

被引：156

作者：

KRICK, DT ^{[1
]}

LENAHAN, PM ^{[1
]}

KANICKI, J ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.341499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3558 / 3563

页数：6

共 31 条

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[4] DANGLING BONDS IN MEMORY-QUALITY SILICON-NITRIDE FILMS
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[5] E' CENTER IN GLASSY SIO2 - O-17, H-1, AND VERY WEAK SI-29 SUPERHYPERFINE STRUCTURE
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[6] METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS
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[7] CALCULATIONS OF THE G-VALUE AND LINEWIDTH OF THE ELECTRON-SPIN-RESONANCE SIGNAL IN AMORPHOUS-SILICON NITRIDE
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[8] ELECTRON-SPIN-RESONANCE STUDY OF DEFECTS IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE
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KANICKI, J
KRICK, DT
LENAHAN, PM
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 445 - 447
[9] KANICKI J, 1986, P S SILICON NITRIDE, V87, P261
[10] HYDROGEN-RELATED MEMORY TRAPS IN THIN SILICON-NITRIDE FILMS
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STEIN, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 600 - 607

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