1ST OBSERVATION OF THE SI-29 HYPERFINE SPECTRA OF SILICON DANGLING BOND CENTERS IN SILICON-NITRIDE

被引:97
作者
LENAHAN, PM
CURRY, SE
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D O I
10.1063/1.103278
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the first observation of 29Si hyperfine spectra of the deep trapping center which dominates the electronic properties of silicon nitride films. Our results provide the first conclusive evidence that the center is a silicon "dangling bond" defect. Our results also demonstrate that the unpaired electron is highly localized (about 75%) on the central silicon and that the wave function is primarily p type.
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页码:157 / 159
页数:3
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