Long-range disorder and metastability in amorphous silicon

被引：2

作者：

Quicker, D ^{[1
]}

West, PW ^{[1
]}

Kakalios, J ^{[1
]}

机构：

[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00741-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Possible changes in the long-range disorder in hydrogenated amorphous silicon (a-Si:H) in association with light-induced defect creation (the Staebler-Wronski effect) have been investigated by combining measurements of the thermopower and conductivity activation energy differences with that of the conductance 1/f noise. There is no observed change in the long-ranged disorder after twenty hours exposure to heat-filtered white light for a series of n-type-doped a-Si:H films. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

引用

页码：397 / 400

页数：4

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