ATOMISTIC ORIGINS OF LIGHT-INDUCED DEFECTS IN A-SI

被引：52

作者：

FEDDERS, PA

FU, Y

DRABOLD, DA

机构：

[1] WASHINGTON UNIV, DEPT PHYS, ST LOUIS, MO 63130 USA

[2] UNIV ILLINOIS, DEPT MAT SCI & ENGN, URBANA, IL 61801 USA

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.68.1888

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present an atomistic model of light-induced defects (the Staebler-Wronski effect). The model is based in part on our observations of molecular-dynamics simulations with an ab initio code and requires a change in the charge of a well-localized state in the gap, such as a dangling bond, to nucleate a defect. The defects are formed at weak-bond sites in the network following a rearrangement caused by the change of the charge of the localized state.

引用

页码：1888 / 1891

页数：4

共 25 条

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