N-type doping of an electron-transport material by controlled gas-phase incorporation of cobaltocene

被引:84
作者
Chan, Calvin K.
Amy, Fabrice
Zhang, Qing
Barlow, Stephen
Marder, Seth
Kahn, Antoine
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Georgia Inst Technol, Dept Chem & Biochem, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
D O I
10.1016/j.cplett.2006.09.034
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
N-doping of an electron-transport material, a tris(thieno)hexaazatriphenylene derivative (1), with the strongly reducing molecule bis(cyclopentadienyl)-cobalt(II) (cobaltocene, CoCp2), is investigated using ultra-violet, X-ray, and inverse photoemission spectroscopies, and current-voltage measurements. Condensed CoCp2 films show a 4 eV ionization energy, which is unusually low for vacuum-deposited molecular material and suggests that cobaltocene is promising as a molecular n-dopant. Efficient n-doping of 1 by CoCp2 is confirmed by a 0.56 eV shift of the Fermi level toward the unoccupied states of the host, and by a three orders of magnitude current increase in devices where compound I is interfacially doped with cobaltocene. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:67 / 71
页数:5
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