Control of island formation on silicon surfaces using ultra-high-vacuum scanning electron microscopy

被引：4

作者：

Homma, Y ^{[1
]}

Finnie, P ^{[1
]}

Ogino, T ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Kanagawa 2430198, Japan

来源：

JOURNAL OF ELECTRON MICROSCOPY | 2000年 / 49卷 / 02期

关键词：

scanning electron microscopy; in situ imaging; Si(111)-Au; liquid metal island; step bunch;

D O I：

10.1093/oxfordjournals.jmicro.a023802

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

In situ scanning electron microscopy has been used to control Au island formation on a patterned Si(111) surface with a periodic array of atomic-step bunches and holes. Liquid phase Au-Si islands were observed to redistribute on the patterned surface by annealing. The islands accumulate at a particular position of the step bunch in each pattern unit. This phenomenon is interpreted in terms of the energetic stability of a droplet on a patterned surface.

引用

页码：225 / 229

页数：5

共 11 条

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