Atomic step networks as selective epitaxial templates

被引:12
作者
Finnie, P [1 ]
Homma, Y [1 ]
机构
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 24301, Japan
关键词
D O I
10.1063/1.120906
中图分类号
O59 [应用物理学];
学科分类号
摘要
A technique to control epitaxial growth laterally across a wafer is presented, which does not use a mask A vicinal Si(111) substrate was patterned by optical lithography and heated to fabricate a regular pattern of bunches of atomic steps. Under appropriate growth conditions, it is seen that epitaxial material, here GaAs, sticks only to the step bunches, not to the terraces. It is possible to fabricate large-scale complex networks of GaAs with micron scale and submicron scale features. The conditions required to obtain selective growth are presented. It is shown that there are two regimes of selective growth-high temperature (> 550 degrees C), or low temperature (< 400 degrees C). Selectivity is obtained via two distinct mechanisms: desorption and diffusion, respectively. (C) 1998 American Institute of Physics.
引用
收藏
页码:827 / 829
页数:3
相关论文
共 17 条