NONPLANAR AND MASKED-AREA EPITAXY BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION

被引：17

作者：

BHAT, R

机构：

[1] Bellcore, Red Bank, NJ

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 06期

关键词：

D O I：

10.1088/0268-1242/8/6/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we review some of the recent work on growth on non-planar and masked GaAs and InP substrates and show how it can simplify device fabrication, enable novel or more functional devices to be made, and how it can be applied to the formation of low-dimensional structures.

引用

页码：984 / 993

页数：10

共 77 条

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