NONPLANAR AND MASKED-AREA EPITAXY BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION

被引：17

作者：

BHAT, R

机构：

[1] Bellcore, Red Bank, NJ

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 06期

关键词：

D O I：

10.1088/0268-1242/8/6/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we review some of the recent work on growth on non-planar and masked GaAs and InP substrates and show how it can simplify device fabrication, enable novel or more functional devices to be made, and how it can be applied to the formation of low-dimensional structures.

引用

收藏

页码：984 / 993

页数：10

相关论文

共 77 条

[51] DFB-LD/MODULATOR INTEGRATED LIGHT-SOURCE BY BANDGAP ENERGY CONTROLLED SELECTIVE MOVPE [J].

KATO, T ;

SASAKI, T ;

KOMATSU, K ;

MITO, I .

ELECTRONICS LETTERS, 1992, 28 (02) :153-154

[52] SELECTIVE EMBEDDED GROWTH OF GAINAS BY LOW-PRESSURE MOVPE [J].

KAYSER, O ;

OPITZ, B ;

WESTPHALEN, R ;

NIGGEBRUGGE, U ;

SCHNEIDER, K .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :141-146

[53] SELECTIVE GROWTH OF INP/GAINAS IN LP-MOVPE AND MOMBE/CBE [J].

KAYSER, O .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :989-998

[54] SELECTIVE AREA GROWTH OF INGAASP BY OMVPE [J].

KIM, MS ;

CANEAU, C ;

COLAS, E ;

BHAT, R .

JOURNAL OF CRYSTAL GROWTH, 1992, 123 (1-2) :69-74

[55] CRYSTAL ORIENTATION DEPENDENCE OF IMPURITY DOPANT INCORPORATION IN MOVPE-GROWN III-V MATERIALS [J].

KONDO, M ;

ANAYAMA, C ;

TANAHASHI, T ;

YAMAZAKI, S .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :449-456

[56] APPLICATION OF SELECTIVE EPITAXY TO FABRICATION OF NANOMETER SCALE WIRE AND DOT STRUCTURES [J].

LEBENS, JA ;

TSAI, CS ;

VAHALA, KJ ;

KUECH, TF .

APPLIED PHYSICS LETTERS, 1990, 56 (26) :2642-2644

[57]

MAASEN M, 1991, 5TH BIENN WORKSH ORG

[58]

Manasevit H. M., 1972, Journal of Crystal Growth, V13-14, P306, DOI 10.1016/0022-0248(72)90175-3

[59] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].

MANASEVIT, HM ;

SIMPSON, WI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1725-+

[60] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J].

MANASEVIT, HM .

APPLIED PHYSICS LETTERS, 1968, 12 (04) :156-+

← 1 2 3 4 5 6 7 8 →