Influence of AlN protective film thickness on the hardness and electrophotographic properties of organic photoconductors

被引：3

作者：

Miao, XS ^{[1
]}

Chan, YC ^{[1
]}

Wong, CKH ^{[1
]}

Webb, DP ^{[1
]}

Lam, YW ^{[1
]}

Leung, KM ^{[1
]}

Chiu, DS ^{[1
]}

机构：

[1] CITY UNIV HONG KONG,DEPT PHYS & MAT SCI,HONG KONG,HONG KONG

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 04期

关键词：

AIN film; electrophotographic properties; microhardness; organic photoconductor;

D O I：

10.1007/s11664-997-0107-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The deposition of a protective film to increase the hardness of an organic photoconductor (OPC) surface is an effective method to lengthen the lifetime of the OPC. In this work, AlN protective films were deposited onto OPC samples by rf reactive magnetron sputtering with low substrate temperature. The AIN films were deposited with optimized sputtering conditions and exhibited very high transmissivity in the visible wavelength range 300 similar to 800 nm. The films caused a remarkable increase in the hardness of the OPC surface, by between 32 and 62%. The acceptance voltage, dark decay rate, photodischarge rate, difference between the residual potential and the acceptance voltage of the OPC protected by AlN film were improved. These results show AW is a suitable protective film for OPC.

引用

页码：387 / 390

页数：4

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