The Bond Strength of Au/Si Eutectic Bonding Studied by IR Microscope

被引:15
作者
Jing, Errong [1 ]
Xiong, Bin [1 ]
Wang, Yuelin [1 ]
机构
[1] Chinese Acad Sci, State Key Lab Transducer Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
来源
IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING | 2010年 / 33卷 / 01期
关键词
Au/Si eutectic bonding; bond strength; eutectic bonding; infrared (IR); wafer bonding; WAFER; GOLD;
D O I
10.1109/TEPM.2009.2035307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interface of Au/Si(100) eutectic bonding was investigated by infrared (IR) microscope and related to the bond strength. A strong relationship between the IR images and the bond strengths was found. Bond strength test showed that a strong bond has many square black spots in the IR images, whereas a poor bond has fewer or no square black spots. In order to study the nature of the relationship, the dissolution behavior of the bare Si(100) surface after bonding was investigated. During the Au/Si(100) eutectic reaction, the dissolution of the bare Si(100) surface primarily occurs by the formation of the craters which result in many square black spots in the IR images. The formation of the craters is ascribed to the anisotropic nature of Au/Si reaction that results in three-dimensional dissolution behavior on the bare Si(100) side. In order to further test the anisotropy hypothesis, Au/Si(111) bonding was also studied. Under the same bonding conditions, triangular black spots were observed in the IR images and triangular pits were found on the bare Si(111) surface. The analysis suggests that the craters on the bare Si(100) surface, in other words the square black spots in the IR images, are the indication of Au/Si(100) eutectic reaction. More craters mean a reaction between Au and Si(100), which occurs uniformly at the Au/Si(100) bonding interface compared to the case of fewer craters. No crater indicates that there is no eutectic reaction in the region. Therefore, the IR microscope may be used to evaluate and compare the different bond strengths qualitatively.
引用
收藏
页码:31 / 37
页数:7
相关论文
共 15 条
[1]  
Chen P.H., 2007, APPL PHYS LETT, V90
[2]   SURFACE ENERGY OF GERMANIUM AND SILICON [J].
JACCODINE, RJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :524-527
[3]   Interfacial reaction of eutectic AuSi solder with Si (100) and Si (111) surfaces [J].
Jang, JW ;
Hayes, S ;
Lin, JK ;
Frear, DR .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) :6077-6081
[4]   Characterization of low-temperature wafer bonding using thin-film Parylene [J].
Kim, H ;
Najafi, K .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2005, 14 (06) :1347-1355
[5]   Gold metallizations for eutectic bonding of silicon wafers [J].
Lani, S. ;
Bosseboeuf, A. ;
Belier, B. ;
Clerc, C. ;
Gousset, C. ;
Aubert, J. .
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2006, 12 (10-11) :1021-1025
[6]   Formation of silicon-gold eutectic bond using localized heating method [J].
Lin, LW ;
Cheng, YT ;
Najafi, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (11B) :L1412-L1414
[7]  
Okamoto H., 1983, Bulletin of Alloy Phase Diagrams, V4, P190, DOI DOI 10.1007/BF02884878
[8]   Wafer-to-wafer bonding for microstructure formation [J].
Schmidt, MA .
PROCEEDINGS OF THE IEEE, 1998, 86 (08) :1575-1585
[9]   ASSEMBLING 3-DIMENSIONAL MICROSTRUCTURES USING GOLD SILICON EUTECTIC BONDING [J].
TIENSUU, AL ;
BEXELL, M ;
SCHWEITZ, JA ;
SMITH, L ;
JOHANSSON, S .
SENSORS AND ACTUATORS A-PHYSICAL, 1994, 45 (03) :227-236
[10]   Applications of infrared microscopy to IC and MEMS packaging [J].
Trigg, A .
IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, 2003, 26 (03) :232-238