Gold metallizations for eutectic bonding of silicon wafers

被引：22

作者：

Lani, S.

Bosseboeuf, A.

Belier, B.

Clerc, C.

Gousset, C.

Aubert, J.

机构：

[1] Univ Paris 11, UMR CNRS 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[2] Univ Paris 11, IN2P3 CNRS, Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France

来源：

MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2006年 / 12卷 / 10-11期

关键词：

Silicon Wafer; Gold Film; Rutherford Backscatter Spectroscopy; Gold Metallization; Wafer Bonding;

D O I：

10.1007/s00542-006-0228-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gold eutectic bonding of silicon wafers is a good candidate for wafer level vacuum packaging of vibrating MEMS: in this paper we investigated several e-beam evaporated metallizations stacks including a titanium adhesion layer, an optional diffusion barrier (Ni or Pt) and a gold film for eutectic bonding on Si and SiO2/Si wafers. Interdiffusion in the multilayers for annealing temperatures (380-430 degrees C) larger than the Au-Si eutectic temperature (363 degrees C) and times corresponding to a bonding process was characterized by RBS, roughness and resistivity measurements. Au/Pt/Ti and Au/Ti/SiO2 were found to have the best characteristics for bonding. This was confirmed by bonding experiments.

引用

页码：1021 / 1025

页数：5

共 6 条

[1] Low-pressure-encapsulated resonant structures with integrated electrodes for electrostatic excitation and capacitive detection [J].