共 422 条
- [1] Abe T., 1990, Proceedings of the Fourth International Symposium on Silicon-on-Insulator Technology and Devices, P61
- [2] DISLOCATION-FREE SILICON-ON-SAPPHIRE BY WAFER BONDING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 514 - 518
- [3] FABRICATION AND BONDING STRENGTH OF BONDED SILICON-QUARTZ WAFERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B): : 334 - 337
- [4] SURFACE IMPURITIES ENCAPSULATED BY SILICON-WAFER BONDING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2315 - L2318
- [5] SILICON-WAFER BONDING MECHANISM FOR SILICON-ON-INSULATOR STRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2311 - L2314
- [6] ADAMSON AW, 1990, PHYSICAL CHEM SURFAC
- [9] GROWTH, SHRINKAGE, AND STABILITY OF INTERFACIAL OXIDE LAYERS BETWEEN DIRECTLY BONDED SILICON-WAFERS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (01): : 85 - 94