STABILITY OF INTERFACIAL OXIDE LAYERS DURING SILICON-WAFER BONDING

被引：43

作者：

AHN, KY ^{[1
]}

STENGL, R ^{[1
]}

TAN, TY ^{[1
]}

GOSELE, U ^{[1
]}

SMITH, P ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

关键词：

D O I：

10.1063/1.343141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：561 / 563

页数：3

共 20 条

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HALL, EL
LILLQUIST, RD
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2773 - 2777
[5] BLACK RD, IN PRESS MRS S P SIL
[6] CRAVEN RA, 1981, SEMICONDUCTOR SILICO, P254
[7] THE ROLE OF THE INTERFACIAL LAYER IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS
ELTOUKHY, AA
ROULSTON, DJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1862 - 1869
[8] FOLL H, 1979, PHILOS MAG A, V40, P589, DOI 10.1080/01418617908234861
[9] FURUKAWA K, 1986, 18TH INT C SOL STAT, P533
[10] CARBON IN SILICON - PROPERTIES AND IMPACT ON DEVICES
KOLBESEN, BO
MUHLBAUER, A
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (08) : 759 - 775