Low temperature wafer anodic bonding

被引：131

作者：

Wei, J ^{[1
]}

Xie, H ^{[1
]}

Nai, ML ^{[1
]}

Wong, CK ^{[1
]}

Lee, LC ^{[1
]}

机构：

[1] Singapore Inst Mfg Technol, Singapore 638075, Singapore

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2003年 / 13卷 / 02期

关键词：

D O I：

10.1088/0960-1317/13/2/308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, anodic bonding between silicon wafer and glass wafer (Pyrex 7740) has been achieved at low temperature. The bond strength is measured using a tensile testing machine. The interfaces are examined and analyzed by scanning acoustic microscopy (SAM), scanning electron microscopy (SEM) and secondary ion mass spectrometry (SIMS). The effects of the bonding parameters on bond quality are investigated using the Taguchi method. The bonding temperature used ranges from 200degreesC to 300degreesC. Almost bubble-free interfaces have been obtained. The bonded area increases with increasing bonding temperature. The unbonded area is less than 1.5% within the whole wafer for bonding temperature between 200degreesC and 300degreesC. The bond strength is higher than 10 MPa and increases with the bonding temperature. Fracture mainly occurs inside the glass wafer other than in the interface when the bonding temperature is higher than 225degreesC. Higher bonding temperature results in more oxygen migration to the interface and more Si-O bonds. The bonding mechanisms consist of hydrogen bonding and Si-O chemical reaction.

引用

页码：217 / 222

页数：6

共 15 条

[1] A hermetic glass-silicon package formed using localized aluminum/silicon-glass bonding [J].