A hermetic glass-silicon package formed using localized aluminum/silicon-glass bonding

被引：53

作者：

Cheng, YT

Lin, LW

Najafi, K

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Wireless Integrated Microsyst, Ann Arbor, MI 48109 USA

[2] Univ Calif Berkeley, Dept Mech Engn, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2001年 / 10卷 / 03期

基金：

美国国家科学基金会;

关键词：

activation energy; aluminuni/(silicon)-glass bonding; hermetic MEMS package; localized heating; reliability;

D O I：

10.1109/84.946791

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A hermetic package based on localized aluminuni/silicon-to-glass bonding has been successfully demonstrated. Less than 0.2 MPa contact pressure with 46 mA current input for two parallel 3.5-mum-wide polysilicon on-chip microheaters can raise the temperature of the bonding region to 700 degreesC bonding temperature and achieve a strong and reliable bond in 7.5 min. The formation of aluminum oxide with silicon precipitate composite layer is believed to be the source of the strong bond. Accelerated testing in an autoclave shows some packages survive more than 450 h under 3 atm, 100% RH and 128 degreesC. Premature failure has been attributed to some unbonded regions on the failed samples. The bonding yield and reliability have been improved by increasing bonding time and applied pressure.

引用

页码：392 / 399

页数：8

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