INFRARED OBSERVATION OF THERMALLY ACTIVATED OXIDE REDUCTION WITHIN AL/SIOX/SI TUNNEL-DIODES

Electron-beam-evaporated aluminum/silicon oxide/silicon tunnel diodes with an initial oxide thickness of 1.3 nm have been annealed for up to 1 h at temperatures from 213 to 369-degrees-C. They have been investigated by infrared grazing internal reflection (GIR) spectroscopy and current-voltage measurements. The measured IR spectra were analyzed by computer modeling. All spectral features could be explained self-consistently within a Al/AlOy/SiOx/Si layer model. In the as-deposited state less than 0.6 monolayers of Al-O bonds are formed at the Al/SiOx interface. A thermally activated reduction of the ultrathin oxide film by Al was observed. The changes in the current-voltage curves induced by slight annealing (1 min at 213-degrees-C) are accompanied by changes in the insulator-bonding structure, which GIR is sensitive enough to detect.