LOW-TEMPERATURE SI3N4 DIRECT BONDING

被引：74

作者：

BOWER, RW ^{[1
]}

ISMAIL, MS ^{[1
]}

ROBERDS, BE ^{[1
]}

机构：

[1] UNIV CALIF DAVIS,DEPT MECH AERONAUT & MAT ENGN,DAVIS,CA 95616

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 26期

关键词：

D O I：

10.1063/1.109002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Extremely strong bonds can be formed between smooth, clean layers of Si3N4 at temperatures ranging between 90 and 300-degrees-C. These bonds have been formed between Si3N4 layers deposited on various substrates with deposition temperatures as low as 300-degrees-C. The bond is initially formed at room temperature and subsequently annealed at temperatures ranging between 90 and 300-degrees-C. Thus, the materials bonded in this manner are never exposed to temperatures higher than 300-degrees-C. This low temperature bond greatly expands the range of applications of direct bonding which had heretofore been restricted by the temperatures of 700 to 1000-degrees-C required by conventional wafer bonding.

引用

页码：3485 / 3487

页数：3

共 20 条

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