SILICON-NITRIDE DIRECT BONDING

被引：12

作者：

ISMAIL, MS ^{[1
]}

BOWER, RW ^{[1
]}

VETERAN, JL ^{[1
]}

MARSH, OJ ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,CTR MICROELECTR TECHNOL,CARLSBAD,CA 92009

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

Integrated circuits; Silicon; Wafer bonding;

D O I：

10.1049/el:19900677

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Direct bonding has been accomplished between silicon nitride coated wafers and both nitride coated and uncoated silicon wafers. Successful bonding occurred when the initial nitride was hydrophilic as deposited or the nitride surface is rendered hydrophilic by a wet oxidation process prior to bonding. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1045 / 1046

页数：2

共 5 条

[1] CONVERSION OF SILICON NITRIDE INTO SILICON DIOXIDE THROUGH INFLUENCE OF OXYGEN [J].

FRANZ, I ;

LANGHEINRICH, W .

SOLID-STATE ELECTRONICS, 1971, 14 (06) :499-+

[2] WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J].

LASKY, JB .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :78-80

[3] A DIELECTRICALLY ISOLATED PHOTODIODE ARRAY BY SILICON-WAFER DIRECT BONDING [J].

OHURA, J ;

TSUKAKOSHI, T ;

FUKUDA, K ;

SHIMBO, M ;

OHASHI, H .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :454-456

[4] A TECHNOLOGY FOR HIGH-PERFORMANCE SINGLE-CRYSTAL SILICON-ON-INSULATOR TRANSISTORS [J].

SPANGLER, LJ ;

WISE, KD .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) :137-139

[5]

YAMADA A, 1987, ELECTRON LETT, V23, P41

← 1 →